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Typical Characteristics T J = 25°C unless otherwise noted
20
16
V GS = -10V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
4.0
3.5
V GS = -3V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
V GS = -4.5V
3.0
12
V GS = -4V
2.5
V GS = -3.5V
V GS = -4V
8
2.0
4
V GS = -3.5V
V GS = -3V
1.5
1.0
V GS = -4.5V
V GS = -10V
0
0
1
2
3
4
5
0.5
0
4
8 12
16
20
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.6
- I D , DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
200
1.4
I D = - 4.2A
V GS = -10V
160
I D = -4.2A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
1.2
1.0
120
80
T J = 125 o C
0.8
0.6
40
0
T J = 25 o C
-75
-50
-25 0 25 50 75 100 125 150
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On- Resistance
vs Junction Temperature
20
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
20
16
12
8
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
V DS = -5V
T J = 150 o C
10
1
0.1
V GS = 0V
T J = 150 o C
T J = 25 o C
4
T J = 25 o C
0.01
T J = -55 o C
0
1
2
T J = -55 o C
3
4
5
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2007 Fairchild Semiconductor Corporation
FDC365P Rev.C
3
www.fairchildsemi.com
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